2SD2098T100R 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SD2098T100R Datasheet PDF : 4 Pages
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Transistors
2SD2098 / 2SD2118 / 2SD2097
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
5
A(DC)
ICP
10
A(Pulse) ∗1
2SD2098
Collector power
dissipation
2SD2118
PC
2SD2097
Junction temperature
Tj
0.5
2
W ∗2
1
10
W(Tc=25°C)
1
W ∗3
150
°C
Storage temperature
Tstg
−55~+150
°C
∗1 Single pulse Pw=10ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board glass epoxy board, 1.6 mm thick with copper plating 100mm2 or larger.
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
50
20
6
−
−
−
120
−
−
Typ.
−
−
−
−
−
0.25
−
150
30
Max.
−
−
−
0.5
0.5
1.0
390
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=40V
VEB=5V
IC/IB=4A/0.1A
∗
VCE=2V, IC=0.5A
∗
VCE=6V, IE=−50mA, f=100MHz
VCE=20V, IE=0A, f=1MHz
!Packaging specifications and hFE
Type
2SD2098
2SD2118
2SD2097
Package
Code
hFE Basic ordering unit (pieces)
QR
QR
QR
T100
1000
−
−
Taping
TL
2500
−
−
TV2
2500
−
−
hFE values are classified as follows :
Item
hFE
Q
120~270
R
180~390
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