D44H8(1997) 데이터 시트보기 (PDF) - STMicroelectronics

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D44H8
(Rev.:1997)

NPN SILICON POWER TRANSISTORS

STMicroelectronics 

D44H8/D44H11

THERMAL DATA

Rthj-ca se Thermal Resistance Junction-case

Max

2.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol

P a ram et er

Test Conditions

ICBO

Collector Cut-off

Current (IE = 0)

IEBO Emitt er Cut-off Current

(IC = 0)

VCEO(sus )∗ Collect or-Emitter

Sustaining Voltage

VCB = rated VCEO

VEB = 5V

IC = 100 mA

for D44H8

for D44H11

VCE(sat)∗ Collect or-Emitter

Saturation Voltage

IC = 8 A

IB = 0.4 A

VBE(s at)∗ Base-Emitt er

Saturation Voltage

IC = 8 A

IB = 0.8 A

hFE∗ DC Current G ain

IC = 2 A

IC = 4 A

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

VCE = 1 V

VCE = 1 V

Min. Typ.

60

80

60

40

M a x.

10

100

1

1.5

Unit

µA

µA

V

V

V

V

Safe Operating Area

Derating Curves

2/5

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