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MPSW45(2010) 데이터 시트보기 (PDF) - ON Semiconductor

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MPSW45
(Rev.:2010)
ON-Semiconductor
ON Semiconductor 
MPSW45 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
MPSW45, MPSW45A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
MPSW45
MPSW45A
Collector Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPSW45
MPSW45A
Emitter Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
MPSW45
MPSW45A
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
(IC = 500 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
Collector Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 2.0 mAdc)
BaseEmitter Saturation Voltage
(IC = 1.0 Adc, IB = 2.0 mAdc)
Base Emitter On Voltage
(IC = 1.0 Adc, VCE = 5.0 Vdc)
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
CollectorBase Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Symbol
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Ccb
Min
Max
40
50
50
60
12
100
100
100
25,000
15,000
4,000
150,000
1.5
2.0
2.0
100
6.0
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
Vdc
Vdc
Vdc
MHz
pF
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
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