MPSW45, MPSW45A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
MPSW45
MPSW45A
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPSW45
MPSW45A
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
MPSW45
MPSW45A
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
(IC = 500 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 2.0 mAdc)
Base−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 2.0 mAdc)
Base −Emitter On Voltage
(IC = 1.0 Adc, VCE = 5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Symbol
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Ccb
Min
Max
40
−
50
−
50
−
60
−
12
−
−
100
−
100
−
100
25,000
15,000
4,000
−
150,000
−
−
1.5
−
2.0
−
2.0
100
−
−
6.0
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
−
Vdc
Vdc
Vdc
MHz
pF
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2