SFH618A-3X007(2004) 데이터 시트보기 (PDF) - Vishay Semiconductors
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SFH618A-3X007 Datasheet PDF : 8 Pages
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VISHAY
200
SFH618A / SFH6186
Vishay Semiconductors
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
150
Phototransistor
100
50
Diode
0
0
18485
25 50 75 100 125 150
Tamb – Ambient Temperature ( qC )
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Thermal resistance
Test condition
IF = 5.0 mA
VR = 6.0 V
VR = 0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
VF
1.1
1.5
V
IR
.01
10
µA
CO
25
pF
Rthja
1070
K/W
Output
Parameter
Collector-emitter leakage
current
Collector-emitter capacitance
Thermal resistance
Test condition
VCE = 10 V
VCE = 5.0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
ICEO
10
200
nA
CCE
7
pF
Rthja
500
K/W
Coupler
Parameter
Collector-emitter saturation
voltage
Coupling capacitance
Test condition
IC = 0.32 mA, IF = 1.0 mA
IC = 0.5 mA, IF = 1.0 mA
IC = 1.25 mA, IF = 1.0 mA
IC = 0.8 mA, IF = 1.0 mA
Part
Symbol Min
Typ.
Max
Unit
SFH618A-2 VCEsat
SFH6186-2
0.25
0.4
V
SFH618A-3 VCEsat
SFH6186-3
0.25
0.4
V
SFH618A-4 VCEsat
SFH6186-4
0.25
0.4
V
SFH618A-5 VCEsat
SFH6186-5
0.25
0.4
V
CC
0.25
pF
Document Number 83673
Rev. 1.5, 20-Apr-04
www.vishay.com
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