PMBFJ177 데이터 시트보기 (PDF) - Philips Electronics

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PMBFJ177

P-channel silicon field-effect transistors

Philips Electronics 

Philips Semiconductors

P-channel silicon field-effect transistors

DYNAMIC CHARACTERISTICS

Tj = 25 °C unless otherwise specified

Input capacitance, f = 1 MHz

VGS = 10 V; VDS = 0 V

VGS = VDS = 0

Feedback capacitance, f = 1 MHz

VGS = 10 V; VDS = 0 V

Switching times (see Fig.2 + 3)

Delay time

Rise time

Turn-on time

Storage temperature

Fall time

Turn-off time

Test conditions:

Cis

Cis

Crs

td

tr

ton

ts

tf

toff

−VDD

VGS off

RL

VGS on

Product specification

PMBFJ174 to 177

typ.

8

pF

typ.

30

pF

typ.

PMBFJ174

typ.

2

typ.

5

typ.

7

typ.

5

typ. 10

typ. 15

4

175 176

5 15

10 20

15 35

10 15

20 20

30 35

pF

177

20 ns

25 ns

45 ns

20 ns

25 ns

45 ns

10

6

6

12

8

6

560 1200 2000

0

0

0

6V

3V

2900 Ω

0V

handbook, halfpage

−VDD

50 Ω

Vout

RL

Vin

50 Ω

D.U.T

MBK292

Fig.2 Switching times test circuit

VGSoff

INPUT

10%

90%

OUTPUT

10%

90%

tf

ts

10%

90%

tr

td

MBK293

Rise time input voltage < 1 ns

Fig.3 Input and output waveforms

td + tr = ton

ts + tf = toff

April 1995

4

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