PMBTA64 데이터 시트보기 (PDF) - Philips Electronics
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PMBTA64 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP Darlington transistor
Product specification
PMBTA64
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V)
• High DC current gain (min. 10000).
APPLICATIONS
• High input impedance preamplifiers.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP Darlington transistor in a SOT23 plastic package.
NPN complement: PMBTA14.
MARKING
TYPE NUMBER
PMBTA64
MARKING CODE(1)
∗2V
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
1
2
Top view
1
3
TR1
TR2
2
MAM299
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
VBE = 0
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−30
−30
−10
−500
−800
−200
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 13
2
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