MJH6287(2012) 데이터 시트보기 (PDF) - ON Semiconductor
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MJH6287 Datasheet PDF : 7 Pages
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MJH6284 (NPN),
MJH6287 (PNP)
Darlington Complementary
Silicon Power Transistors
These devices are designed for general−purpose amplifier and
low−speed switching motor control applications.
Features
• Similar to the Popular NPN 2N6284 and the PNP 2N6287
• Rugged RBSOA Characteristics
• Monolithic Construction with Built−in Collector−Emitter Diode
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak
Symbol
VCEO
VCB
VEB
IC
Max
100
100
5.0
20
40
Unit
Vdc
Vdc
Vdc
Adc
Base Current
IB
Total Device Dissipation @ TC = 25_C
PD
Derate above 25_C
0.5
Adc
160
W
1.28
W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 65 to + 150 _C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case RqJC
0.78
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
1
May, 2012 − Rev. 7
http://onsemi.com
DARLINGTON 20 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
100 VOLTS, 160 WATTS
SOT−93
(TO−218)
CASE 340D
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MJH6284/D
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