HS-245RH, HS-246RH, HS-248RH
Die Characteristics
DIE DIMENSIONS:
45 mils x 45 mils x 11 mils
1140µm x 1140µm x 280µm
INTERFACE MATERIALS:
Glassivation:
Type: Silox
Thickness: 8kÅ ±1kÅ
Top Metallization:
Type: Aluminum
Thickness: 12.5kÅ ±2kÅ
Substrate:
HFSB Bipolar/Dielectric Isolation
Backside Finish:
Silicon
Metallization Mask Layout
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased
ADDITIONAL INFORMATION:
Worst Case Current Density:
7.8 x 104 A/cm2
Transistor Count:
6
HS-245RH
OUTPUT f2
INPUT f2
INPUT f1
OUTPUT f2
OUTPUT f1
INPUT f1
7