NTE5368 데이터 시트보기 (PDF) - NTE Electronics

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NTE5368

Silicon Controlled Rectifier (SCR) 125 Amp

NTE Electronics 

Absolute Maximum Ratings (Cont’d): (TJ = +125°C unless otherwise specified)

Peak On–State Voltage (ITM = 280A), VTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.54V

Forward Conduction Threshold Voltage, VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7V

Forward Conduction Slope Resistance, r . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3mΩ

Repetitive Peak Off–State Current (At VDRM), IDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA

Repetitive Peak Reverse Current (At VRRM), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA

Maximum Gate Current (VA = 6V, IA = 1A, TJ = +25°C), IGT . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA

Maximum Gate Voltage (VA = 6V, IA = 1A, TJ = +25°C), VGT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V

Maximum Holding Current (VA = 6V, IA = 1A, TJ = +25°C), IH . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA

Maximum Gate Voltage Which Will Not Trigger Any Device, VGD . . . . . . . . . . . . . . . . . . . . . . . 0.25V

Typical Stored Charge (ITM = 200A, drR/dt = 10A/µs, VRM = 50V, 50% chord value), Qrr . . . . 25µC

Circuit Commutated Turn–Off Time (ITM = 200A, diR/dt = 10A/µs, VRM = 50V), tq

(200V/µs to 80% VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25–40µs

(20V/µs to 80% VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (typical) 20–35µs

1.227 (31.18) Dia

(Across Corners)

.280 (7.11)

.260 (6.6) Dia Max

.650 (16.51) Max

Cathode

1.810

(45.97)

Max

.415 (10.55)

.812

(20.6)

Anode

Gate

1.031 (26.18) Dia Max

.500 (12.7) Max

1/2–20 UNF

(Terminal 3)

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