D45H5 데이터 시트보기 (PDF) - STMicroelectronics
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D45H5 Datasheet PDF : 5 Pages
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D45H5/D45H8/D45H11
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.5
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCB = rated VCEO
VEB = -5V
IC = -100 mA
for D45H5
for D45H8
for D45H11
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = -8 A
IC = -8 A
IB = -0.4 A
IB = -0.8 A
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = -8 A
IB = -0.8 A
hFE∗ DC Current Gain
IC = -2 A
IC = -4 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
VCE = -1 V
VCE = -1 V
Min. Typ.
-45
-60
-80
60 120
40
70
Max.
-10
-100
-1
-1
-1.5
Unit
µA
µA
V
V
V
V
V
Safe Operating Area
Derating Curves
2/5
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