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VN410 데이터 시트보기 (PDF) - STMicroelectronics

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VN410 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
ELECTRICAL TRANSIENTS REQUIREMENTS
ISO T/R
7637/1
Test Pu lse
I
II
1
-25 V
-50 V
2
+25 V
+50 V
3a
-25 V
-50 V
3b
+25 V
+50 V
4
-4 V
-5 V
5
+26.5
+46.5
TEXT LEVELS
III
IV
-75 V
+75 V
-100 V
+75 V
-6 V
+66.5
-100 V
+100 V
-150 V
+100 V
-7 V
+86.5
VN410
Delays and
Impedance
2 ms, 10
0.2 ms, 10
100 µs, 50
100 µs, 50
100 ms, 0.01
400 ms, 2
ISO T/R
TEXT LEVELS RESULTS
7637/1
Test Pu lse
I
II
III
IV
1
C
C
E
E
2
C
C
E
E
3a
C
C
C
C
3b
C
C
C
C
4
C
C
C
C
5
C
C
E
E
* :with an external capacitor of 22nF connected between Vbat and GND, with loads connected (2 bulbs per channel),and with a maximum of
10µH output inductance.
CL ASS
C ONT ENT S
C
All function of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device is not performed as designed after exposure and
cannot be returned to proper operation without replacing the device.
3/11

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