TLWB / BG / O / R / TG / W / Y7600
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TLWR7600 , TLWY7600 , TLWO7600
Parameter
Reverse voltage
DC Forward current
Surge forward current
Power dissipation
Junction temperature
Test condition
IR = 10 µA
Tamb ≤ 85 °C
tp ≤ 10 µs
Tamb ≤ 85 °C
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/
ambient
Thermal resistance junction/pin
t ≤ 5 s, 1.5 mm from body
preheat temperature
100 °C/ 30 sec.
with cathode heatsink
of 70 mm2
TLWTG7600 , TLWBG7600 , TLWB7600 , TLWW7600
Parameter
Reverse voltage
DC Forward current
Surge forward current
Power dissipation
Test condition
IR = 10 µA
Tamb ≤ 50 °C
tp ≤ 10 µs
Tamb ≤ 50 °C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 5 s, 1.5 mm from body
preheat temperature
100 °C/ 30 sec.
Thermal resistance junction/
ambient
with cathode heatsink
of 70 mm2
Thermal resistance junction/pin
Symbol
Value
Unit
VR
10
V
IF
70
mA
IFSM
1
A
PV
187
mW
Tj
125
°C
Tamb
- 40 to + 110
°C
Tstg
- 55 to + 110
°C
Tsd
260
°C
RthJA
RthJP
Part
TLWTG7600
TLWBG7600
TLWB7600
TLWW7600
200
K/W
90
K/W
Symbol
Value
Unit
VR
5
V
IF
50
mA
IFSM
0.1
A
PV
230
mW
PV
230
mW
PV
230
mW
PV
255
mW
Tj
100
°C
Tamb
- 40 to + 100
°C
Tstg
- 55 to + 100
°C
Tsd
260
°C
RthJA
200
RthJP
90
K/W
K/W
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Red
TLWR7600
Parameter
Total flux
Luminous intensity/Total flux
Dominant wavelength
Peak wavelength
Angle of half intensity
Total included angle
Forward voltage
Test condition
IF = 70 mA, RthJA = 200 °K/W
IF = 70 mA, RthJA = 200 °K/W
IF = 70 mA, RthJA = 200 °K/W
IF = 70 mA, RthJA = 200 °K/W
IF = 70 mA, RthJA = 200 °K/W
90 % of Total Flux Captured
IF = 70 mA, RthJA=200 °K/W
Symbol
φV
IV/φV
λd
λp
ϕ
ϕ
VF
Min
1500
611
1.83
www.vishay.com
2
Typ.
2100
0.8
618
624
± 30
75
2.2
Max
3000
634
2.67
Unit
mlm
mcd/mlm
nm
nm
deg
deg
V
Document Number 83138
Rev. 2.2, 14-Jan-05