NTE5636 데이터 시트보기 (PDF) - NTE Electronics
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NTE5636 Datasheet PDF : 2 Pages
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Gate Trigger Current
IGT VD = 12V, Note 1
–
– 50 mA
Gate Trigger Voltage
VGT VD = 12V, All Quadrants
–
– 2.5 V
Holding Current
IH
RGK = 1kΩ
–
– 50 mA
Critical Rate–of–Rise
dv/dt VD = 0.67 x VDRM, RGK = 1kΩ, TJ = +125°C 500 –
– V/µs
Critical Rate–of–Rise, Off–State dv/dtc IT = 8A, di/dt = 3.55A/ms, TC = +85°C
5
–
– V/µs
Note 1. For either polarity of gate voltage with reference to electrode MT1.
.147 (3.75)
Dia Max
.420 (10.67)
Max
MT2
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
MT1
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Gate
MT2
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