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ADM1052JR 데이터 시트보기 (PDF) - Analog Devices

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ADM1052JR Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
ABSOLUTE MAXIMUM RATINGS*
(TA = 25°C unless otherwise noted)
VCC to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 V
SHDN1, SHDN2 to GND . . . . . . . . –0.3 V to (VCC + 0.3 V)
SENSE1, SENSE2 to GND . . . . . . . . . . . . –0.3 V to +5.5 V
FORCE1, FORCE2 . . . . . . . . Short-Circuit to GND or VCC
Continuous Power Dissipation (TA = 70°C) . . . . . . . 650 mW
8-Lead SOIC . . . . . . . . . . . . (Derate 8.3 mW/°C above 70°C)
Operating Temperature Range
Commercial (J Version) . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . 300°C
*This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operation sections of this specifica-
tion is not implied. Exposure to absolute maximum rating conditions for extended
periods of time may affect reliability.
THERMAL CHARACTERISTICS
8-Lead Small Outline Package: JA = 150°C/W
Model
ADM1052JR
ORDERING GUIDE
Temperature
Range
0°C to 70°C
Package
Description
8-Lead SOIC
Package
Option
SO-8
12V
3.3V
1F
VCC
PHD55N03LT
100F
FORCE 1
LEAVE OPEN OR
CONNECT TO
LOGIC SIGNALS
IF SHUTDOWN
REQUIRED
SENSE 1
SHDN1
3.3V
ADM1052
SHDN2
MTD3055VL
FORCE 2
VOUT1
2 ؋ 100F
100F
GND
SENSE 2
VOUT2
2 ؋ 100F
ADM1052
PIN FUNCTION DESCRIPTIONS
Pin
No. Mnemonic Function
1
FORCE 2 Output of Channel 2 control amplifier to
gate of external N-channel MOSFET.
2
SENSE 2 Input from source of external MOSFET to
inverting input of Channel 2 control
amplifier, via output voltage-setting feed-
back resistor network.
3
SHDN2
Digital Input. Active-low shutdown control
with 50 µA internal pull-up. The output
of Channel 2 control amplifier goes to
ground when SHDN2 is taken low.
4
GND
Device Ground Pin.
5
SHDN1
Digital Input. Active-low shutdown control
with 50 µA internal pull-up. The output
of Channel 1 control amplifier goes to
ground when SHDN1 is taken low.
6
SENSE 1 Input from source of external MOSFET
to inverting input of Channel 1 control
amplifier, via output voltage-setting
feedback resistor network.
7
FORCE 1 Output of Channel 2 control amplifier to
gate of external N-channel MOSFET.
8
VCC
12 V Supply.
PIN CONFIGURATION
FORCE 2 1
8 VCC
SENSE 2 2 ADM1052 7 FORCE 1
TOP VIEW
SHDN2 3 (Not to Scale) 6 SENSE 1
GND 4
5 SHDN1
Figure 1. Test Circuit
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADM1052 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. A
–3–

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