H15R1202 데이터 시트보기 (PDF) - Infineon Technologies
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H15R1202 Datasheet PDF : 12 Pages
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IHW15N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Applications:
• Inductive Cooking
• Soft Switching Applications
C
G
E
PG-TO-247-3-21
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
IHW15N120R2 1200V 15A
1.5V
175°C H15R1202
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp ≤ 2.5µs, sine halfwave
TC = 100°C, tp ≤ 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Mounting Torque
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
Ms
Package
PG-TO-247-3-21
Value
Unit
1200
V
A
30
15
45
45
30
15
45
50
130
120
±20
V
±25
357
W
-40...+175
°C
-55...+175
260
0.6
Nm
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 1.2 May 06
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