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BSP615S2L 데이터 시트보기 (PDF) - Infineon Technologies

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BSP615S2L
Infineon
Infineon Technologies 
BSP615S2L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
Thermal resistance, chip to ambient air:
@ min. footprint
@ 6 cm2 cooling area 1)
BSP615S2L
Symbol
Values
Unit
min. typ. max.
RthJS
RthJA
-
19 23 K/W
-
- 120
-
-
70
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS 55
-
-V
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID=12µA
Zero gate voltage drain current
VDS=55V, VGS=0V, Tj=25°C
VDS=55V, VGS=0V, Tj=125°C2)
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=1.4A
Drain-source on-state resistance
VGS=10V, ID=1.4A
VGS(th)
1.2 1.6
2
I DSS
I GSS
µA
-
0.1
1
-
10 100
-
10 100 nA
RDS(on)
-
86 150 m
RDS(on)
-
67 90
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2Defined by design. Not subject to production test.
Page 2
2003-10-29

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