BT169D-L(2007) 데이터 시트보기 (PDF) - NXP Semiconductors.
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BT169D-L Datasheet PDF : 12 Pages
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NXP Semiconductors
BT169D-L
Thyristor, logic level
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
BT169D-L
TO-92
plastic single-ended leaded (through hole) package; 3 leads
4. Limiting values
Version
SOT54
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
VRRM
IT(AV)
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
half sine wave; Tlead ≤ 83 °C;
see Figure 1
IT(RMS)
RMS on-state current
all conduction angles; see Figure 4
and 5
ITSM
non-repetitive peak on-state
half sine wave; Tj = 25 °C prior to
current
surge; see Figure 2 and 3
t = 10 ms
t = 8.3 ms
I2t
I2t for fusing
t = 10 ms
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
rate of rise of on-state current
peak gate current
peak gate voltage
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
ITM = 2 A; IG = 10 mA;
dIG/dt = 100 mA/µs
over any 20 ms period
Min
[1] -
[1] -
-
-
-
-
-
-
-
-
-
-
-
−40
-
Max
400
400
0.5
0.8
8
9
0.32
50
1
5
5
2
0.1
+150
125
Unit
V
V
A
A
A
A
A2s
A/µs
A
V
V
W
W
°C
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
BT169D-L_1
Product data sheet
Rev. 01 — 12 November 2007
© NXP B.V. 2007. All rights reserved.
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