ICS8344I-01
LOW SKEW, 1-TO-24 DIFFERENTIAL-TO-LVCMOS/LVTTL FANOUT BUFFER
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, VDD
4.6V
Inputs, V
I
-0.5V to V + 0.5 V
DD
Outputs, VO
-0.5V to VDDO + 0.5V
Package Thermal Impedance, θJA 47.9°C/W (0 lfpm)
Storage Temperature, TSTG
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Functional op-
eration of product at these conditions or any conditions beyond
those listed in the DC Characteristics or AC Characteristics is not
implied. Exposure to absolute maximum rating conditions for ex-
tended periods may affect product reliability.
TABLE
4A.
POWER
SUPPLY
DC
CHARACTERISTICS,
V
DD
=
V
DDO
=
3.3V±5%
OR
2.5V
±
5%,
OR
V
DD
=
3.3V
±
5%,
V
DDO
=
2.5V
±
5%;
TA = -40°C TO 85°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum Units
VDD
Core Supply Voltage
3.135
3.3
3.465
V
2.375
2.5
2.625
V
VDDO
Output Supply Voltage
3.135
3.3
3.465
V
2.375
2.5
2.625
V
IDD
Power Supply Current
IDDO
Output Supply Current
70
mA
25
mA
TABLE 4B. LVCMOS DC CHARACTERISTICS, VDD = VDDO = 3.3V±5% OR 2.5V ± 5%, OR VDD = 3.3V ± 5%, VDDO = 2.5V ± 5%;
TA = -40°C TO 85°C
Symbol
VIH
VIL
IIH
IIL
Parameter
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
CLK_SEL,
CLK_EN, OE
CLK_SEL,
CLK_EN, OE
CLK_EN, OE
CLK_SEL
CLK_EN, OE
CLK_SEL
VOH
Output High Voltage
VOL
Output Low Voltage
Test Conditions
VDD = VIN = 3.465V or 2.625V
VDD = VIN = 3.465V or 2.625V
VDD = 3.465 or 2.625V, VIN = 0V
VDD = 3.465 or 2.625V, VIN = 0V
VDDO = 3.135V, IOH = -36mA
VDDO = 2.375V, IOH = -27mA
VDDO
=
3.135V,
I
OL
=
36mA
VDDO = 2.375V, IOL = 27mA
Minimum Typical Maximum Units
2
VDD + 0.3
V
-0.3
0.8
V
-150
-5
2.6
1.8
5
µA
150
µA
µA
µA
V
V
0.5
V
0.5
V
IDT™ / ICS™ LVCMOS/LVTTL FANOUT BUFFER
4
ICS8344AYI-01 REV. B MAY 10, 2007