IS62WV102416BLL-25ML 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS62WV102416BLL-25ML

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

Integrated Silicon Solution 

IS62WV102416ALL

IS62WV102416BLL

IS65WV102416BLL

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol Parameter

Test Condition

VDR

VDD for Data Retention

See Data Retention Waveform

IDR

Data Retention Current

VDD = 1.2V, CS1 ≥ VDD – 0.2V

Com.

Ind.

Auto.

tSDR

Data Retention Setup Time See Data Retention Waveform

tRDR

Recovery Time

See Data Retention Waveform

Note:

1. Typical values are measured at VDD = 3.0V, TA = 25oC and not 100% tested.

DATA RETENTION WAVEFORM (CS1 Controlled)

VDD

1.65V

1.4V

VDR

CS1

GND

tSDR

Data Retention Mode

CS1 ≥ VDD - 0.2V

Min. Typ.(1) Max. Unit

1.2

3.6 V

—

0.1 0.8 mA

—

0.1 1.2

—

0.1

2

0

— ns

tRC

— ns

tRDR

DATA RETENTION WAVEFORM (CS2 Controlled)

Data Retention Mode

VDD

3.0

CE2

2.2V

VDR

0.4V

GND

tSDR

CS2 ≤ 0.2V

tRDR

14

Integrated Silicon Solution, Inc. — www.issi.com

Rev. A

01/18/08

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