KSH112TM 데이터 시트보기 (PDF) - Fairchild Semiconductor

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KSH112TM

NPN Silicon Darlington Transistor

Fairchild Semiconductor 

Typical Characteristics

10000

1000

VCE = 3V

100

10

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

1000

100

10

1

0.1

1

10

100

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Collector Output Capacitance

10

VCC =30V

IC=250IB

tSTG

1

tF

0.1

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 5. Turn Off Time

©2002 Fairchild Semiconductor Corporation

10

IC = 250 IB

VBE(sat)

1

VCE(sat)

0.1

0.01

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

10

VCC=30V

IC=250IB

1

tR

0.1

0.01

0.1

1

IC[A], COLLECTOR CURRENT

tD

10

Figure 4. Turn On Time

10

100µs

5ms1ms

1

DC

0.1

0.01

1

10

100

1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 6. Safe Operating Area

Rev. A4, October 2002

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