TRUTH TABLE
E
GW
Mode
H
X
X
Not Selected
L
H
H Output Disabled
L
L
H
Read
L
X
L
Write
H = High, L = Low, X = Don’t Care
I/O Pin
High–Z
High–Z
Dout
Din
Cycle
—
—
Read
Write
Current
ISB1, ISB2
ICCA
ICCA
ICCA
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage Relative to VSS
VCC
– 0.5 to 7.0
V
Voltage Relative to VSS for Any Pin
Except VCC
Vin, Vout – 0.5 to VCC + 0.5 V
Output Current (per I/O)
Iout
± 20
mA
Power Dissipation
PD
1.0
W
Temperature Under Bias
Tbias
– 10 to + 85
°C
Operating Temperature
TA
0 to + 70
°C
Storage Temperature
Tstg
– 55 to + 150
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to these high–impedance
circuits.
This CMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage (Operating Voltage Range)
Input High Voltage
Input Low Voltage
* VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 20 ns).
** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width ≤ 20 ns).
Symbol
VCC
VIH
VIL
DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Output Leakage Current (E = VIH, Vout = 0 to VCC)
AC Active Supply Current (Iout = 0 mA, all inputs =
VIL or VIH, VIL = 0, VIH ≥ 3 V, cycle time ≥ tAVAV min,
VCC = max)
MCM6229BB–15: tAVAV = 15 ns
MCM6229BB–17: tAVAV = 17 ns
MCM6229BB–20: tAVAV = 20 ns
MCM6229BB–25: tAVAV = 25 ns
MCM6229BB–35: tAVAV = 35 ns
AC Standby Current (VCC = max, E = VIH, f = fmax)
MCM6229BB–15: tAVAV = 15 ns
MCM6229BB–17: tAVAV = 17 ns
MCM6229BB–20: tAVAV = 20 ns
MCM6229BB–25: tAVAV = 25 ns
MCM6229BB–35: tAVAV = 35 ns
CMOS Standby Current (E ≥ VCC – 0.2 V, Vin ≤ VSS + 0.2 V
or ≥ VCC – 0.2 V, VCC = max, f = 0 MHz)
Output Low Voltage (IOL = + 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
Symbol
Ilkg(I)
Ilkg(O)
ICCA
ISB1
ISB2
VOL
VOH
Min
4.5
2.2
– 0.5*
Max
Unit
5.5
V
VCC + 0.3** V
0.8
V
Min
Max
Unit
—
±1
µA
—
±1
µA
—
155
mA
—
150
—
135
—
130
—
110
—
45
mA
—
40
—
35
—
30
—
25
—
5
mA
—
0.4
V
2.4
—
V
MCM6229BB
2
MOTOROLA FAST SRAM