¡ Semiconductor
MSM511000C/CL
AC Characteristics (2/2)
(VCC = 5 V ±10%, Ta = 0°C to 70°C) Note 1, 2, 3
Parameter
MSM511000 MSM511000 MSM511000 MSM511000
Symbol C/CL-45 C/CL-50 C/CL-60 C/CL-70 Unit Note
Min. Max. Min. Max. Min. Max. Min. Max.
Read Command Set-up Time
tRCS 0 — 0 — 0 — 0 — ns
Read Command Hold Time
tRCH 0 — 0 — 0 — 0 — ns 8
Read Command Hold Time referenced to RAS tRRH 0 — 0 — 0 — 0 — ns 8
Write Command Set-up Time
tWCS 0 — 0 — 0 — 0 — ns 9
Write Command Hold Time
Write Command Hold Time from RAS
tWCH 10 — 10 — 10 — 15 — ns
tWCR 35 — 40 — 50 — 55 — ns
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
tWP 10 — 10 — 10 — 15 — ns
tRWL 14 — 14 — 15 — 20 — ns
tCWL 14 — 14 — 15 — 20 — ns
Data-in Set-up Time
tDS 0 — 0 — 0 — 0 — ns 10
Data-in Hold Time
tDH 12 — 13 — 15 — 15 — ns 10
Data-in Hold Time from RAS
tDHR 35 — 40 — 50 — 55 — ns
CAS to WE Delay Time
tCWD 14 — 14 — 15 — 20 — ns 9
Column Address to WE Delay Time
tAWD 24 — 26 — 30 — 35 — ns 9
RAS to WE Delay Time
tRWD 45 — 50 — 60 — 70 — ns 9
CAS Precharge WE Delay Time
tCPWD 33 — 35 — 40 — 45 — ns 9
CAS Active Delay Time from RAS Precharge tRPC 0 — 0 — 0 — 0 — ns
RAS to CAS Set-up Time (CAS before RAS) tCSR 10 — 10 — 10 — 10 — ns
RAS to CAS Hold Time (CAS before RAS) tCHR 25 — 25 — 30 — 30 — ns
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