TAN250A 데이터 시트보기 (PDF) - Advanced Semiconductor

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TAN250A

RF POWER TRANSISTOR

Advanced Semiconductor 

RF POWER TRANSISTOR

TAN250A

DESCRIPTION:

The ASI TAN250A is a Common

Base Transistor Designed for DME,

TACAN and IFF Pulse Power Amplifier

Applications.

FEATURES INCLUDE:

• Gold Metallization

• Hermetic Package

• Input/Output Matching

MAXIMUM RATINGS

IC

30 A

VCB

PDISS

60 V

575 W @ TC = 25 OC

TJ

T STG

θ JC

-65 OC to +200 OC

-65 OC to +200 OC

0.30 OC/W

PACKAGE STYLE

CHARACTERISTICS TC = 25 OC

SYMBOL

TEST CONDITIONS

BVCBO

IC = 20 mA

BVCES

IC = 25 mA

RBE = 10 Ω

BVEBO

IE = 20 mA

ICBO

VCB = 50 V

hFE

VCE = 5 V

IC = 1.0 A

MINIMUM TYPICAL MAXIMUM

60

60

4.0

12

20

120

UNITS

V

V

V

mA

---

POUT

250

W

P

VCC = 50 V

PIN = 13 W f = 960 to 1215 MHz

6.0

7.0

dB

G

ηC

Pulse Width = 20 µS

Duty Cycle = 5 %

40

%

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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