BCP28 데이터 시트보기 (PDF) - Infineon Technologies

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BCP28

PNP Silicon Darlington Transistors

Infineon Technologies 

BCP28, BCP48

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

V(BR)CEO

IC = 1 mA, IB = 0

BCP28

30

-

BCP48

60

-

V

-

-

Collector-base breakdown voltage

V(BR)CBO

IC = 100 µA, IE = 0

BCP28

40

-

-

BCP48

80

-

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

Collector cutoff current

VCB = 30 V, IE = 0

VCB = 60 V, IE = 0

BCP28

BCP48

V(BR)EBO 10

ICBO

-

-

-

-

nA

- 100

- 100

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C

VCB = 60 V, IE = 0 , TA = 150 °C

BCP28

BCP48

ICBO

µA

-

-

10

-

-

10

Emitter cutoff current

VEB = 4 V, IC = 0

DC current gain 1)

IC = 100 µA, VCE = 1 V

BCP28

BCP48

IEBO

hFE

-

- 100 nA

4000 -

2000 -

-

-

-

DC current gain 1)

IC = 10 mA, VCE = 5 V

hFE

BCP28

10000 -

-

BCP48

4000 -

-

DC current gain 1)

IC = 100 mA, VCE = 5 V

hFE

BCP28

20000 -

-

BCP48

10000 -

-

DC current gain 1)

IC = 500 mA, VCE = 5 V

hFE

BCP28

BCP48

4000 -

-

2000 -

-

1) Pulse test: t ≤ 300µs, D = 2%

2

Nov-29-2001

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