HY27SS08561M 데이터 시트보기 (PDF) - Hynix Semiconductor

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HY27SS08561M

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory

Hynix Semiconductor 

HY27SS(08/16)561M Series

HY27US(08/16)561M Series

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

CLE

CE

WE

ALE

RE

I/O

90h

tALLRL1

tRLQV

(Read ES Access time)

00h

Man.

code

Device

code

Don't

Care

Don't

Care

Read Electronic

1st Cycle

Signature Command Address

Manufacturer and

Device Code

Reserved For

Future Use

Figure 26. Read Electronic Signature AC Waveform

Note: Refer to table(To see Page 22) for the values of the manufacture and device codes.

CLE

CE

WE

ALE

RE

RB

I/O

tWHWL

tWHBL

tWHBH

tBLBH1

tEHEL

tEHQZ

tEHBH

tALLRL2

tRLRH

tRLRL

tRHQZ

(Read Cycle time)

tRHBL

00h or

01h

Command

Code

Add.N

cycle 1

Add.N

cycle 2

Add.N

cycle 3

Address N Input

Busy

Data

N

Data

N+1

Data

N+2

Data

Last

Data Output

from Address N to Last Byte or Word in Page

Figure 27. Read Read A/ Read B Operation AC Waveform

Rev 0.7 / Oct. 2004

33

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