M81019FP 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC

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M81019FP

1200V HIGH VOLTAGE HALF BRIDGE DRIVER

MITSUBISHI ELECTRIC  

MITSUBISHI SEMICONDUCTORS <HVIC>

M81019FP

1200V HIGH VOLTAGE HALF BRIDGE DRIVER

DESCRIPTION

M81019FP is high voltage Power MOSFET and IGBT gate

driver for half bridge applications.

FEATURES

¡Floating supply voltage up to 1200V

¡Low quiescent power supply current

¡Separate sink and source current output up to ±1A (typ)

¡Active Miller effect clamp NMOS with sink current up to –1A (typ)

¡Input noise filters

¡Over-current detection and output shutdown

¡High side under voltage lockout

¡FO pin which can input and output Fault signals to commu-

nicate with controllers and synchronize the shut down with

other phases

¡Pb-free

¡24-Lead SSOP package

PIN CONFIGURATION (TOP VIEW)

NC

NC

VB

HPOUT

HNOUT1

HNOUT2

VS

NC

NC

NC

NC

NC

APPLICATIONS

Power MOSFET and IGBT gate driver for Medium and Mi-

cro inverter or general purpose.

Outline: 24P2Q

NC

HIN

LIN

FO_RST

CIN

GND

FO

VCC

LPOUT

LNOUT1

LNOUT2

VNO

BLOCK DIAGRAM

GND

UV

Logic

Filter

HIN

LIN

CIN

+

Vref –

FO_RST

Interlock

& Noise Filter

Pulse

Generator

Protection

Logic

Filter

VCC Vreg

VREG Vref

Filter

VB

HPOUT

HNOUT1

HNOUT2

VS

VCC

LPOUT

LNOUT1

LNOUT2

VNO

FO

Aug. 2009

1

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