P1N120 데이터 시트보기 (PDF) - STMicroelectronics

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P1N120

N-channel 1200V - 30Ω - 500mA - TO-220 Zener - protected SuperMESH™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STP1N120

(TCASE=25°C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

1200

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc=125°C

1 µA

50 µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

±10 µA

VGS(th) Gate threshold voltage

VDS= VGS, ID = 50µA

3 3.75 4.5 V

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 0.25A

30 38 Ω

Table 5. Dynamic

Symbol

Parameter

Ciss

Coss

Crss

Qg

Qgs

Qgd

Input capacitance

Output capacitance

Reverse transfer

capacitance

Total gate charge

Gate-source charge

Gate-drain charge

Test conditions

Min. Typ. Max. Unit

VDS =25V, f=1MHz, VGS=0

130

pF

22

pF

3

pF

VDD=960V, ID = 500mA

VGS =10V

(see Figure 2)

7

nC

Tbd

nC

Tbd

nC

4/10

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