BAS21SW 데이터 시트보기 (PDF) - NXP Semiconductors.

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BAS21SW

High-voltage switching diodes

NXP Semiconductors. 

BAS21W series

High-voltage switching diodes

Rev. 01 — 9 October 2009

Product data sheet

1. Product profile

1.1 General description

High-voltage switching diodes, encapsulated in a very small Surface-Mounted

Device (SMD) plastic package.

Table 1. Product overview

Type number

Configuration

BAS21W

BAS21AW

BAS21SW

single

dual common anode

dual series

Package

NXP

SOT323

JEDEC

SC-70

Package

configuration

very small

1.2 Features

I High switching speed: trr ≤ 50 ns

I Low leakage current

I High reverse voltage: VR ≤ 250 V

I Low capacitance: Cd ≤ 2 pF

I Very small SMD plastic package

I AEC-Q101 qualified

1.3 Applications

I High-speed switching

I General-purpose switching

I Voltage clamping

I Reverse polarity protection

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter

Per diode

IF

forward current

IR

reverse current

VR

reverse voltage

trr

reverse recovery time

Conditions

VR = 200 V

Min Typ

[1] -

-

-

-

-

-

[2] -

-

[1] Single diode loaded.

[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.

Max

225

100

250

50

Unit

mA

nA

V

ns

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