BAS21SW 데이터 시트보기 (PDF) - NXP Semiconductors.
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BAS21SW Datasheet PDF : 11 Pages
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NXP Semiconductors
BAS21W series
High-voltage switching diodes
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] -
-
625 K/W
-
-
300 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF
forward voltage
IF = 100 mA
IF = 200 mA
IR
reverse current
VR = 200 V
VR = 200 V; Tj = 150 °C
Cd
diode capacitance
f = 1 MHz; VR = 0 V
trr
reverse recovery time
Min Typ
-
-
-
-
-
-
-
-
-
-
[1] -
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
Max Unit
1.0 V
1.25 V
100 nA
100 µA
2
pF
50 ns
BAS21W_SER_1
Product data sheet
Rev. 01 — 9 October 2009
© NXP B.V. 2009. All rights reserved.
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