BT131-600/DG(2015) 데이터 시트보기 (PDF) - NXP Semiconductors.

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BT131-600/DG
(Rev.:2015)

4Q Triac

NXP Semiconductors. 

NXP Semiconductors

BT131-600

4Q Triac

Symbol

Parameter

Conditions

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

VD = 12 V; IT = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 7

Dynamic characteristics

dVD/dt

rate of rise of off-state

voltage

VDM = 402 V; Tj = 125 °C; RGT1 = 1 kΩ;

(VDM = 67% of VDRM); exponential

waveform; Fig. 12

Min Typ Max Unit

-

1.4 3

mA

-

3.8 7

mA

10

20

-

V/µs

5. Pinning information

Table 2. Pinning information

Pin

Symbol Description

1

T2

main terminal 2

2

G

gate

3

T1

main terminal 1

Simplified outline

321

TO-92 (SOT54)

Graphic symbol

T2

T1

G

sym051

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

BT131-600

TO-92

BT131-600/DG

TO-92

Description

plastic single-ended leaded (through hole) package; 3 leads

plastic single-ended leaded (through hole) package; 3 leads

Version

SOT54

SOT54

BT131-600

Product data sheet

All information provided in this document is subject to legal disclaimers.

6 May 2015

© NXP Semiconductors N.V. 2015. All rights reserved

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