K2154 데이터 시트보기 (PDF) - SANYO -> Panasonic

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K2154

N-Channel Silicon MOSFET

SANYO -> Panasonic 

2SK2154

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

ID

IDP

PD

Tch

Tstg

Electrical Characteristics at Ta = 25˚C

Conditions

PW≤10µs, duty cycle≤1%

Tc=25°C

Parameter

Symbol

Conditions

Drain-to-Source Breakdown Voltage

Gate-to-Source Breakdown Voltage

Zero-Gate Votlage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Diode Forward Voltage

Drain Current

V(BR)DSS

V(BR)GSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VSD

IDSX

ID=1mA, VGS=0

IG=±100µA, VDS=0

VDS=20V, VGS=0

VGS=±12V, VDS=0

VDS=10V, ID=1mA

VDS=10V, ID=6A

ID=6A, VGS=10V

ID=6A, VGS=4V

VDS=10V, f=1MHz

VDS=10V, f=1MHz

VDS=10V, f=1MHz

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

IS=8A, VGS=0

VDS=5V, VGS=0.1V

Switching Time Test Circuit

Ratings

Unit

20 V

±18 V

12 A

48 A

30 W

150 ˚C

–55 to +150 ˚C

Ratings

Unit

min

typ

max

20

V

±18

V

100 µA

±10 µA

0.8

2.0 V

7

10

S

30

42 mΩ

45

58 mΩ

1000

pF

650

pF

220

pF

13

ns

35

ns

180

ns

120

ns

1.0

1.5 V

0.5 µA

No.4689–2/4

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