B1002 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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B1002

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SB1002

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

VCBO

VCEO

VEBO

IC

i *1

C(peak)

PC * 2

Tj

–70

–50

–6

–1

–1.5

1

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%

2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)

Unit

V

V

V

A

A

W

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown

V(BR)CBO

–70

—

voltage

Collector to emitter breakdown V(BR)CEO –50

—

voltage

Emitter to base breakdown

V(BR)EBO

–6

—

voltage

Collector cutoff current

I CBO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE*1

100 —

Collector to emitter saturation VCE(sat) —

—

voltage

Base to emitter saturation

voltage

VBE(sat)

—

—

Gain bandwidth product

fT

—

150

Collector output capacitance Cob

—

35

Note: 1. The 2SB1002 is grouped by hFE as follows.

Mark

CH

CJ

hFE

100 to 200 160 to 320

Max

—

—

—

–0.1

–0.1

320

–0.6

–1.2

—

—

Unit

V

V

V

µA

µA

V

V

MHz

pF

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –50 V, IE = 0

VEB = –4 V, IC = 0

VCE = –2 V, IC = –0.1 A

IC = –1 A,

IB = –0.1 A (Pulse test)

IC = –1 A,

IB = –0.1 A (Pulse test)

VCE = –2 V,

IC = –10 mA (Pulse test)

VCB = –10 V, IE = 0,

f = 1 MHz

2

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