H5NA100FI 데이터 시트보기 (PDF) - STMicroelectronics
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H5NA100FI Datasheet PDF : 6 Pages
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STW5NA100-STH5NA100FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Qg
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 500 V
2.1 A
RG = 4.7 Ω
VDD = 800 V
ID = 4.2 A
ID =
VGS = 10 V
VGS = 10 V
Min.
Typ.
14
12
59
9.4
26.5
Max.
20
16
83
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 800 V
RG = 4.7 Ω
ID = 4.2A
VGS = 10 V
Min.
Typ.
94
30
142
Max.
132
42
199
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage ISD = 4.2 A
VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 4.2 A
VDD = 30 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
1000
14
28
Max.
4.6
18.4
1.6
Unit
A
A
V
ns
µC
A
3/6
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