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2SK2957 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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제조사
2SK2957
Silicon N Channel MOS FET High Speed Power Switching / 2SK2957(L), 2SK2957(S)
Hitachi -> Renesas Electronics
2SK2957 Datasheet PDF : 9 Pages
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5
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8
9
2SK2957(L),2SK2957(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
0.2
I
D
= 20 A
0.1
10 A
5A
0
4
8
12 16 20
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
500
100
50
20
V
GS
= 4 V
10
10 V
5
1 2 5 10 20 50 100 200
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
I
D
= 5, 10, 20 A
16
V
GS
= 4 V
12
8
10 V
4
5 ,10, 20 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25 °C
10
25 °C
5
75 °C
2
1
0.5
0.1 0.2
0.5 1 2
Drain Current
V
DS
= 10 V
Pulse Test
5 10 20 50
I
D
(A)
4
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