2SA844 데이터 시트보기 (PDF) - Renesas Electronics
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2SA844 Datasheet PDF : 5 Pages
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2SA844
Electrical Characteristics
Item
Symbol Min
Collector to base breakdown voltage
V(BR)CBO
–55
Collector to emitter breakdown voltage V(BR)CEO –55
Emitter to base breakdown voltage
V(BR)EBO
–5
Collector cutoff current
ICBO
—
Emitter cutoff current
DC current transfer ratio
IEBO
—
hFE*1
160
Collector to emitter saturation voltage
VCE(sat)
—
Base to emitter voltage
VBE
—
Gain bandwidth product
fT
—
Collector output capacitance
Cob
—
Note: 1. The 2SA844 is grouped by hFE as follows.
C
D
160 to 320 250 to 500
Typ
—
—
—
—
—
—
–0.1
–0.66
200
2.0
Max
—
—
—
–100
–50
500
–0.5
–0.75
—
—
Unit
V
V
V
nA
nA
V
V
MHz
pF
(Ta = 25°C)
Test conditions
IC = –10 µA, IE = 0
IC = –1 mA, RBE = ∞
IE = –10 µA, IC = 0
VCB = –18 V, IE = 0
VEB = –2 V, IC = 0
VCE = –12 V, IC = –2 mA
IC = –10 mA, IB = –1 mA
VCE = –12 V, IC = –2 mA
VCE = –12 V, IE = –2 mA
VCB = –10 V, IE = 0, f = 1 MHz
Rev.2.00 Aug 10, 2005 page 2 of 4
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