FSCMO765RI 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FSCMO765RI Datasheet PDF : 20 Pages
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FSCM0765R
(Ta=25°C, unless otherwise specified.)
Parameter
Drain-Source (GND) Voltage (1)
Drain-Gate Voltage (RGS=1MΩ)
Gate-Source (GND) Voltage
Drain Current Pulsed (2)
Continuous Drain Current (D2-PAK, I2-PAK)
@ Tc = 25°C
@ Tc =100°C
Continuous Drain Current (TO-220)
@ Tc = 25°C
@ Tc =100°C
Supply Voltage
Analog Input Voltage Range
Total Power Dissipation (D2-PAK,I2-PAK)
Total Power Dissipation (TO-220)
Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
ESD Capability, HBM Model
(All pins except Vfb)
ESD Capability, Machine Model
(All pins except Vfb)
Symbol
VDSS
VDGR
VGS
IDM
ID
ID
ID
ID
VCC
VFB
PD
PD
TJ
TA
TSTG
-
-
Notes:
1. Tj = 25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature.
Value
650
650
±30
21
5.3
3.4
7
4.4
20
-0.3 to VCC
83
145
Internally limited
-25 to +85
-55 to +150
2.0
(GND-Vfb = 1.5kV)
(Vcc-Vfb = 1.0kV)
300
(GND-Vfb = 250V)
(Vcc-Vfb = 100V)
Unit
V
V
V
ADC
ADC
ADC
ADC
ADC
V
V
W
W
°C
°C
°C
kV
V
Thermal Impedance
Parameter
Junction-to-Ambient Thermal
Junction-to-Case Thermal (D2-PAK, I2-PAK)
Junction-to-Case Thermal (TO-220)
Symbol
θJA(1)
θJC(2)
θJC(2)
Note:
1. Free standing with no heat-sink under natural convection
2. Infinite cooling condition - Refer to the SEMI G30-88.
Value
-
1.5
0.9
Unit
°C/W
°C/W
°C/W
4
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