SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1436
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=-50µA ;IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.1A
ICBO
Collector cut-off current
VCB=-20V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-0.5A ; VCE=-2V
fT
Transition frequency
IE=50mA ; VCE=-6V; f=30MHz
Cob
Collector output capacitance
IE=0 ; VCB=-20V; f=1MHz
MIN TYP. MAX UNIT
-30
V
-20
V
-6
V
-1.0 V
-0.5 µA
-0.5 µA
180
390
120
MHz
60
pF
2