10N40L-TF1-T 데이터 시트보기 (PDF) - Unisonic Technologies

부품명

상세내역

제조사

10N40L-TF1-T

10.5A, 400V N-CHANNEL POWER MOSFET

Unisonic Technologies 

10N40

Preliminary

Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS ID=250µA, VGS=0V

Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA

Drain-Source Leakage Current

IDSS

VDS=400V, VGS=0V

Forward

Gate- Source Leakage Current

Reverse

IGSS

VGS=+30V, VDS=0V

VGS=-30V, VDS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH) VDS=VGS, ID=250µA

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

RDS(ON) VGS=10V, ID=5.25A

Input Capacitance

Output Capacitance

CISS

COSS

VGS=0V, VDS=25V, f=1.0MHz

Reverse Transfer Capacitance

SWITCHING PARAMETERS

CRSS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

QG

QGS

VGS=10V, VDS=320V, ID=10.5A

(Note 1, 2)

QGD

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tR

tD(OFF)

VDD=200V, ID=10.5A, RG=25Ω

(Note 1, 2)

Fall-Time

tF

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS=10.5A, VGS=0V

Body Diode Reverse Recovery Time

trr

IS=10.5A, VGS=0V,

Body Diode Reverse Recovery Charge

QRR

dIF/dt=100A/µs (Note 1)

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

MIN TYP MAX UNIT

400

V

0.54

V/°C

1 µA

+100 nA

-100 nA

2.0

4.0 V

0.5 0.65 Ω

840 1090 pF

250 325 pF

80 110 pF

28 35 nC

4

nC

15

nC

14 40 ns

89 190 ns

81 170 ns

81 170 ns

10.5 A

42 A

1.4 V

290

ns

2.4

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 4

QW-R502-549.b

Share Link: