28F016XD 데이터 시트보기 (PDF) - Intel

부품명

상세내역

제조사

28F016XD

16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY

Intel 

E

28F016XD FLASH MEMORY

5.4 DC Characteristics (Continued)

VCC = 3.3V ± 0.3V, TA = 0°C to +70°C

3/5# = Pin Set High for 3.3V Operations

Sym

Parameter

Notes Min

ICCW VCC Word Program

1,6

Current

ICCE VCC Block Erase

1,6

Current

ICCES VCC Erase Suspend

1,2

Current

IPPS VPP Standby/Read

1

Current

IPPD VPP Deep Power-

1

Down Current

IPPW VPP Word Program

1,6

Current

IPPE VPP Block Erase

1,6

Current

IPPES

VIL

VIH

VPP Erase Suspend

Current

Input Low Voltage

Input High Voltage

VOL Output Low Voltage

VOH1 Output High Voltage

VOH2

VPPLK

VPPH1

VPPH2

VLKO

VPP Erase/Program

Lock Voltage

VPP during Program/

Erase Operations

VPP during Program/

Erase Operations

VCC Erase/Program

Lock Voltage

1

6

-0.3

6

2.0

6

6

2.4

6

VCC-

0.2

3,6 0.0

3

4.5

3 11.4

2.0

Typ Max Unit

Test Condition

8

12 mA VPP = 12.0V ± 5%

Program in Progress

8

17 mA VPP = 5.0V ± 10%

Program in Progress

6

12 mA VPP = 12.0V ± 5%

Block Erase in Progress

9

17 mA VPP = 5.0V ± 10%

Block Erase in Progress

1

4

mA RAS#, CAS# = VIH

Block Erase Suspended

± 1 ± 10 µA VPP ≤ VCC

30 200 µA VPP > VCC

0.2

5

µA RP# = GND ± 0.2V

10

15 mA VPP = 12.0V ± 5%

Program in Progress

15

25 mA VPP = 5.0V ± 10%

Program in Progress

4

10 mA VPP = 12.0V ± 5%

Block Erase in Progress

14

20 mA VPP = 5.0V ± 10%

Block Erase in Progress

30 200 µA Block Erase Suspended

0.8 V

VCC + V

0.3

0.4

V VCC = VCC Min

IOL = 4.0 mA

V VCC = VCC Min

IOH = –2.0 mA

V VCC = VCC Min

IOH = –100 µA

1.5 V

5.0 5.5 V

12.0 12.6 V

V

23

Share Link: