2N6217 데이터 시트보기 (PDF) - Inchange Semiconductor
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2N6217 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6216
2N6217
IC=0.1A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=0.4A
VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.75A
VBEsat Base-emitter saturation voltage
IC=6A; IB=0.75A
2N6216 VCE=80V; IB=0
ICEO
Collector cut-off current
2N6217 VCE=70V; IB=0
ICBO
Collector cut-off current
VCB=RatedVCBO; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=5A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=10V
Product Specification
2N6216 2N6217
MIN TYP. MAX UNIT
150
V
140
1.2
V
1.6
V
2.0
V
5.0
mA
1.0
mA
1.0
mA
20
80
20
MHz
2
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