2N6849HP 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc
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2N6849HP Datasheet PDF : 3 Pages
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P-CHANNEL
POWER MOSET
2N6849HP
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
BVDSS
∆BVDSS
∆TJ
RDS(on)
Parameters
Drain-Source Breakdown
Voltage
Temperature Coefficent of
Breakdown Voltage
Static Drain-Source
On-State Resistance
Test Conditions
VGS = 0
ID = -1.0mA
Reference
to 25°C
VGS = -10V
VGS = -10V
ID = -1.0mA
ID = -4.1A (3)
TJ = 125°C
ID = -6.5A (3)
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = -250µA
TJ = 125°C
TJ = -55°C
gfs
Forward Transconductance VDS ≥ -5V
I DS = -4.1A (3)
IDSS
Zero Gate Voltage
Drain Current
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
IGSS
Forward Gate-Source
Leakage
VGS = 20V
TJ = 125°C
IGSS
Reverse Gate-Source
Leakage
VGS = -20V
TJ = 125°C
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VGS = 0
Coss
Crss
Qg (4)
Qgs (4)
Qgd (4)
td(on)
tr
td(off)
tf
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS = -25V
f = 1.0MHz
VGS = -10V
ID = -6.5A
VDS = 0.5BVDSS
VDD = -40V
ID = -4.1A
RG = 7.5Ω
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current (1)
VSD
Diode Forward Voltage
IS = -6.5A
VGS = 0 (4)
TJ = 25°C
trr
Reverse Recovery Time
IS = -6.5A
TJ = 25°C
Qrr
Reverse Recovery Charge
VDD ≤ -50V
di/dt = 100A/µs (3)
Min. Typ Max. Units
-100
V
-0.1
V/°C
0.3
0.54
Ω
0.32
-2
-4
-1.0
V
-5
2.5 3.5
7.5
S(Ʊ)
25
µA
250
100
200
nA
-100
-200
800
350
pF
125
34.8
6.8
nC
23.1
60
140
ns
140
140
-6.5
A
-25
-4.3
V
250
ns
3
µC
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 9395
Website: http://www.semelab-tt.com
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