2SA1010 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SA1010 Datasheet PDF : 5 Pages
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Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-5.0A ,IB=-0.5A,L=1mH
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBEsat Base-emitter saturation voltage
IC=-5A; IB=-0.5A
ICBO
Collector cut-off current
VCB=-100V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
hFE-2
DC current gain
IC=-3A ; VCE=-5V
hFE-3
DC current gain
IC=-5A ; VCE=-5V
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5.0A IB1=- IB2=-0.5A
RL=10Ω;VCC≈50V
hFE-2 Classifications
M
L
K
40-80
60-120 100-200
www.jmnic.com
2SA1010
MIN TYP. MAX UNIT
-100
V
-0.6
V
-1.5
V
-10
μA
-10
μA
40
200
40
200
20
0.5
μs
1.5
μs
0.5
μs
JMnic
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