2SA1116 데이터 시트보기 (PDF) - SavantIC Semiconductor
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2SA1116 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A
ICBO
Collector cut-off current
VCB=-200V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
Switching times resistive load
VEB=-6V; IC=0
IC=-5A ; VCE=-4V
IC=-0.5A ; VCE=-12V
tr
Rise time
ts
Storage time
tf
Fall time
IC=-5.0A IB1=-IB2=-0.5A
RL=12@;VCC=-60V
Product Specification
2SA1116
MIN TYP. MAX UNIT
-200
V
-3.0
V
-0.1 mA
-0.1 mA
30
20
MHz
0.3
µs
0.9
µs
0.2
µs
2
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