2SA1264 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SA1264

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA1264

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0

-120

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A

VBE(on)

Base-Emitter On Voltage

IC= -4A ; VCE= -5V

ICBO

Collector Cutoff Current

VCB= -120V; IE= 0

-2.0 V

-1.5 V

-5 μ A

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-5 μ A

hFE-1

DC Current Gain

IC= -1A; VCE= -5V

55

160

hFE-2

DC Current Gain

IC= -4A; VCE= -5V

35

COB

Output Capacitance

IE=0; VCB= -10V; ftest= 1.0MHz

fT

Current-Gain—Bandwidth Product

IC=-1A; VCE= -5V

420

pF

30

MHz

 hFE-1 Classifications

R

O

55-110 80-160

isc website：www.iscsemi.cn

2 isc & iscsemi is registered trademark

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