2SA1566 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SA1566

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SA1566

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

–120

V

–120

V

–5

V

–100

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO –120 —

voltage

Collector to emitter breakdown V(BR)CEO –120 —

voltage

Emitter to base breakdown

V(BR)EBO

–5

—

voltage

Collector cutoff current

I CBO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE*1

250 —

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter voltage

VBE(sat)

—

—

Notes: 1. The 2SA1566 is grouped by hFE as follows.

2. Pulse test

Grade

D

E

Mark

JID

JIE

hFE

250 to 500 400 to 800

Max Unit

—

V

—

V

—

V

–0.1 µA

–0.1 µA

800

–0.15 V

–1.0 V

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –70 V, IE = 0

VEB = –2 V, IC = 0

VCE = –12 V, IC = –2 mA*2

IC = –10 mA, IB = –1 mA*2

IC = –10 mA, IB = –1 mA*2

2

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