2SA1757 데이터 시트보기 (PDF) - Inchange Semiconductor

부품명

상세내역

제조사

2SA1757

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

Silicon PNP Power Transistor

Product Specification

2SA1757

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0

-60

V

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -3A ; IB= -0.3A; L= 1mH

-60

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -50μA ; IC= 0

-5

V

V(BR)CBO Collector-Base Breakdown Voltage

IE= -50μA ; IC= 0

-100

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB=B -0.15A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB=B -0.2A

VBE(sat)-1 Base-Emitter Saturation Voltage

IC= -3A; IB=B -0.15A

VBE(sat)-2 Base-Emitter Saturation Voltage

IC= -4A; IB=B -0.2A

ICBO

Collector Cutoff Current

VCB= -100V ; IE=0

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

-0.3 V

-0.5 V

-1.2 V

-1.5 V

-10 μA

-10 μA

hFE

DC Current Gain

IC= -1A ; VCE= -2V

160

320

fT

Current-Gain—Bandwidth Product

COB

Output Capacitance

Switching times

IE= 0.5A;VCE= -10V; ftest= 30MHz

IE= 0; VCB= -10V; ftest= 1MHz

80

MHz

130

pF

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

RL= 10Ω, VCC= -30V

IC= -3A; IB1= -IB2= -0.15A

0.3 μs

1.5 μs

0.3 μs

2

Share Link: