2SA1644 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SA1644

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat-1 Collector-emitter saturation voltage IC=-3A; IB=-0.15A

VCEsat -2 Collector-emitter saturation voltage IC=-4A; IB=-0.2A

VBE sat -1 Base-emitter saturation voltage

IC=-3A; IB=-0.15A

VBE sat -2 Base-emitter saturation voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=-4A; IB=-0.2A

VCB=-100V; IE=0

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-0.2A ; VCE=-2V

hFE-2

DC current gain

IC=-1A ; VCE=-2V

hFE-3

DC current gain

IC=-3A ; VCE=-2V

‹ hFE-2 Classifications

M

L

K

100-200 150-300 200-400

Product Specification

2SA1644

MIN TYP. MAX UNIT

-0.3

V

-0.5

V

-1.2

V

-1.5

V

-10

μA

-10

μA

100

100

400

60

2

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