2SA2059(2001) 데이터 시트보기 (PDF) - Toshiba

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2SA2059
(Rev.:2001)

TOSHIBA Transistor Silicon PNP Epitaxial Type

Toshiba 

2SA2059

IC – VCE

−6

−5

−100

−80

−60

−4

−40

−3

−20

−2

−10

IB = −5 mA

−1

Common emitter

Ta = 25°C

Single nonrepetitive pulse

0

0

−0.4

−0.8

−1.2

−1.6

−2.0

−2.4

Collector-emitter voltage VCE (V)

10000

Common emitter

VCE = −2 V

Single

nonrepetitive

pulse

1000

hFE – IC

Ta = 100°C

25

−55

100

10

1

−0.001

−0.01

−0.1

−1

−10

Collector current IC (A)

−10

Common emitter

IC/IB = 30

Single

nonrepetitive

pulse

−1

VCE (sat) – IC

−0.1

−0.01

Ta = 100°C

−55

25

−0.001

−0.001

−0.01

−0.1

−1

−10

Collector current IC (A)

−100

Common emitter

IC/IB = 30

Single

nonrepetitive

pulse

−10

VBE (sat) – IC

−55

−1

25

−0.1

Ta = 100°C

−0.01

−0.001

−0.01

−0.1

−1

−10

Collector current IC (A)

−5

Common emitter

VCE = −2 V

−4 Single nonrepetitive

pulse

IC – VBE

−3

−2

Ta = 100°C

25 −55

−1

0

0

−0.4

−0.8

−1.2

−1.6

Base-emitter voltage VBE (V)

3

2001-10-29

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