2SA653 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SA653

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0

VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA

VBEsat Base-emitter saturation voltage

IC=-0.5A; IB=-50mA

ICBO

Collector cut-off current

VCB=-150V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-0.2A ; VCE=-5V

fT

Transition frequency

IC=-0.1A ; VCE=-10V

Product Specification

2SA653

MIN TYP. MAX UNIT

-120

V

-150

V

-1.5

V

-2.0

V

-10

μA

-10

μA

40

15

MHz

2

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