2SA966 데이터 시트보기 (PDF) - Toshiba
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2SA966 Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA966
Audio Power Amplifier Applications
2SA966
Unit: mm
• Complementary to 2SC2236 and 3-W output applications.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
−30
V
−30
V
−5
V
−1.5
A
1.5
A
900
mW
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
TO-92MOD
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
―
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-5J1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.36 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
1
2006-11-09
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